Amorphous Silicon Carbide for Photovoltaic Applications
نویسندگان
چکیده
Dissertation zur Erlangung des akademischen Grades Doktor der Naturwissenschaften Introduction Figure 1.1: One possible amorphous silicon (white) and carbon (black) network with incorporated hydrogen (small black dots) a-SiC:H. 20 Figure 1.2: Fourier transformed infrared (FTIR) absorption spectra for a typical stoichiometric SiC layer as deposited at 350°C. 21 Figure 1.3: Auger electron spectroscopy (AES) spectra for a typical stoichiometric SiC layer as deposited at 350°C. 23 Figure 1.4: Scheme of the dominating processes in the plasma during deposition and etching. 24 Figure 1.5: Schematic picture of one microwave antenna used in the AK400M reactor from Roth&Rau and graphs of plasma density (n e) and plasma temperature (T e). These graphs have been provided by Roth&Rau. 27 Figure 1.6: Scheme of the AK400M reactor from Roth&Rau company with the reaction chamber (left) and the load lock (right). 28 Figure 1.7: Optical Emission Spectroscopy graphs of two deposition processes with different CH 4 /SiH 4 gas flow ratios. 32 Figure 1.8: SiC deposition rate in dependence of CH 4 /SiH 4 gas flow ratio in the regime for diffusion barrier layers (SiC). 34 Figure 1.9: C/Si ratio in dependence of the CH 4 /SiH 4 ratio for the regime for diffusion barrier layers (SiC). 35 Figure 1.10: SiC deposition rate in dependence of the microwave power in the regime of low defect generation (Si x C 1-x). 36 Figure 2.1: Etching rate on stoichiometric SiC layers in dependence of the NF 3 /Ar gas flow ratio. 41 Figure 2.2: Etching rate on stoichiometric SiC layers in dependence of the bias voltage of the RF plasma source. 42 Figure 3.1: Refractive index n in the SiC layers in dependence of C/Si ratio (diffusion barrier regime). 52 Figure 3.2: Refractive index n of Si x C 1-x layers in dependence of microwave power (low defect regime). 53 Figure 3.3: Bandgap determination from transmission measurement data of a SiC layer after the theory of Tauc et al..
منابع مشابه
Carrier transport property in the amorphous silicon / amorphous silicon carbide multilayer studied by the transient grating technique
متن کامل
Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates
The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx depos...
متن کاملInteraction potential for silicon carbide: A molecular dynamics study of elastic constants and vibrational density of states for crystalline and amorphous silicon carbide
of elastic constants and vibrational density of states for crystalline and amorphous silicon carbide Priya Vashishta, Rajiv K. Kalia, and Aiichiro Nakano Collaboratory for Advanced Computing and Simulations, Department of Chemical Engineering and Materials Science, Department of Physics & Astronomy, and Department of Computer Science, University of Southern California, Los Angeles, California 9...
متن کاملInterference fringe-free transmission spectroscopy of amorphous thin films
Articles you may be interested in Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm 2 / V s for electrons and 0.1 cm 2 / V s for holes Appl. Optical study of disorder and defects in hydrogenated amorphous silicon carbon alloys Appl. Effect o...
متن کاملAmorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells
متن کامل
Investigation of HF/H2O2 Concentration Effect on Structural and Antireflection Properties of Porous Silicon Prepared by Metal-Assisted Chemical Etching Process for Photovoltaic Applications
Porous silicon was successfully prepared using metal-assisted chemical etching method. The Effect of HF/H2O2 concentration in etching solution as an affecting parameter on the prepared porosity type and size was investigated. Field emission electron microscopy (FE-SEM) confirmed that all etched samples had porous structure and the sample which was immersed into HF/H2O2 withmolar ratio of 7/3.53...
متن کامل